Description
Green Silicon Carbide #1250
Green Silicon Carbide Micro Powder is manufactured from premium green silicon carbide grit through crushing, acid washing, overflow classification, siphon classification, drying, and precision particle size control. The advanced siphon classification process ensures a narrow particle size distribution, high purity, and excellent consistency, making the powder ideal for high-precision applications. Available in F240–F3000 and JIS #240–#20000, it is widely used for precision lapping and polishing of optical glass, sapphire, semiconductor wafers, precision ceramics, magnetic materials, and other components requiring superior surface finish and dimensional accuracy.
Green Silicon Carbide #1250 Key Features
High Hardness
Mohs hardness up to 9.2, providing excellent cutting ability and
long service life for precision processing.
High Purity
High SiC content and low impurity level ensure stable polishing
performance and consistent quality.
Fine Particle Distribution
Controlled particle size distribution provides excellent polishing
accuracy and uniform surface finishing.
Excellent Chemical Stability
Maintains stable performance under demanding polishing and
high temperature processing conditions.
Green Silicon Carbide #1250 Available Sizes
- FEPA F Micro Grit:
F230, F240, F280, F320, F360, F400, F500, F600, F800, F1000, F1200, F1500, F2000, F2500, F3000 - JIS:
#240, #280, #320, #360, #400, #500, #600, #700, #800, #1000, #1200, #1500, #2000, #2500, #3000, #4000, #6000, #8000, #10000, #20000 - Micron Size:
63 μm, 40 μm, 28 μm, 20 μm, 14 μm, 10 μm, 7 μm, 5 μm, 3.5 μm, 2.5 μm, 1.5 μm, 1.0 μm, 0.5 μm (Custom Available)
Green Silicon Carbide #1250 Applications
Precision Lapping & Polishing
Used for high-precision polishing of optical glass, sapphire, semiconductor wafers, and precision components, achieving excellent surface finish.
Semiconductor & Photovoltaic Industry
Applied in wafer slicing, grinding, and surface processing of silicon wafers and other semiconductor materials.
Optical Glass Processing
Used for precision grinding and polishing of lenses, crystals, and optical components with high surface quality requirements.
Advanced Ceramics & Electronic Materials
Applied in the processing of ceramic substrates, electronic components, and hard materials requiring high dimensional accuracy.
Green Silicon Carbide #1250 Technical Data
Physical Properties
| Item | Value |
|---|---|
| Appearance | Green Powder |
| Mohs Hardness | 9.2 |
| Basic Mineral | α-SiC (Silicon Carbide) |
| True Density | ≥3.90 g/cm³ |
| Bulk Density | 1.2–1.6 g/cm³ |
| Crystal Structure | Hexagonal |
| CAS No. | 409-21-2 |
| HS Code | 2849200000 |
Chemical Composition (%)
| Model | Particle Size | SiC | F.C. | Fe₂O₃ |
|---|---|---|---|---|
| GC | F230–F280 (#240–#360) | ≥98.40 | ≤0.20 | ≤0.25 |
| F320–F500 (#400–#800) | ≥98.20 | ≤0.20 | ≤0.30 | |
| F600–F800 (#1000–#1500) | ≥98.00 | ≤0.20 | ≤0.30 | |
| F1000–F1200 (#2000–#2500) | ≥97.60 | ≤0.20 | ≤0.30 | |
| #3000–#8000 | ≥96.50 | ≤0.20 | ≤0.30 | |
| #10000–#20000 | ≥96.00 | ≤0.20 | ≤0.30 |
Particle Distribution (μm)
| Particle Size | D0 | D3 | D50 | D94 |
|---|---|---|---|---|
| #240 | ≤127 | ≤103 | 58.6±3.0 | ≥40.0 |
| #320 | ≤98.0 | ≤74.0 | 41.1±2.5 | ≥27.0 |
| #400 | ≤75.0 | ≤58.0 | 30.9±2.0 | ≥20.0 |
| #600 | ≤53.0 | ≤43.0 | 21.1±1.5 | ≥13.0 |
| #800 | ≤38.0 | ≤31.0 | 14.7±1.0 | ≥9.0 |
| #1000 | ≤32.0 | ≤27.0 | 11.9±1.0 | ≥7.0 |
| #2000 | ≤19.0 | ≤17.0 | 6.9±0.6 | ≥4.0 |
| #4000 | ≤11.0 | ≤8.0 | 3.0±0.4 | ≥1.3 |
| #8000 | ≤6.0 | ≤3.5 | 1.2±0.3 | ≥0.6 |
| #20000 | — | — | 0.50 | — |
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